| PART |
Description |
Maker |
| 4GBU005 4GBU01 4GBU02 4GBU04 4GBU06 4GBU08 |
600V Bridge in a GBU package 600V的大桥在GBU
50V Bridge in a GBU package 50V桥一GBU
800V Bridge in a GBU package
400V Bridge in a GBU package
200V Bridge in a GBU package
100V Bridge in a GBU package
|
Cornell Dubilier Electronics, Inc.
International Rectifier
|
| 2KBB10 2KBB100 2KBB20 2KBB80 2KBB 2KBB05 2KBB40 2K |
1.9A single phase rectifier bridge
800V Bridge in a D-37 package
600V Bridge in a D-37 package
400V Bridge in a D-37 package
1000V Bridge in a D-37 package
100V Bridge in a D-37 package
50V Bridge in a D-37 package
200V Bridge in a D-37 package
2KBB SERIES 1.9A single phase rectifier bridge
From old datasheet system
Silver Mica Capacitor; Capacitance:25000pF; Capacitance Tolerance: 5%; Series:CD30; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:Yes RoHS Compliant: Yes 1.9A单相整流
Silver Mica Capacitor; Capacitance:25000pF; Capacitance Tolerance: /- 2%; Series:CD30; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:11.1mm; Leaded Process Compatible:Yes RoHS Compliant: Yes 1.9A单相整流
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 4GBU02LS 4GBU02LSF 4GBU04LS 4GBU04LSF 4GBU06LS 4GB |
200V Low Surge Bridge in a GBU package
400V Low Surge Bridge in a GBU package
600V Low Surge Bridge in a GBU package
|
International Rectifier
|
| IRF340 IRF340-15 |
Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)0.55ohm, Id=10A)
HEXFET?TRANSISTORS 400V, N-CHANNEL
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
IRF[International Rectifier]
|
| OM6103ST OM6101ST OM6104ST OM6001ST OM6002SR OM600 |
400V Single N-Channel Hi-Rel MOSFET in a TO-257AA package 400V单N沟道高可靠性MOSFET的采用TO - 257AA封装
400V , 5.5Amp, N Channel MOSFET With Zener Gate Protection(400V , 5.5A,N沟道，MOS场效应管(带齐纳门保护
100V , 14 Amp, N Channel MOSFET With Zener Gate Protection(100V , 14A,N沟道，MOS场效应管(带齐纳门保护 100V的，14安培，N沟道MOSFET与齐门保护（100V的，14A条，沟道来说，MOS场效应管（带齐纳门保护）
500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
200V Single N-Channel Hi-Rel MOSFET in a D2 package
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a D2 package
400V Single N-Channel Hi-Rel MOSFET in a D2 package
500V Single N-Channel Hi-Rel MOSFET in a D2 package
POWER MOSFET IN HERMETIC ISOLATED JEDEC TO 257AA PACKAGE
Isolated Hermetic Metal Package
|
International Rectifier, Corp.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| OM5322SA OM5322SW |
400V 28A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-254AA package 400V 28A条高可靠性超快速共阴极二极管采用TO - 254AA封装
400V 28A Hi-Rel Ultra-Fast Common Cathode Diode in a D3 package
|
Renesas Electronics, Corp.
International Rectifier
|
| GBU8M GBU8J-BP GBU8K-BP GBU8M-BP GBU8J GBU8D-BP GB |
8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 8A 400V GBU 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 600V GBU 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 800V GBU 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 50V GBU 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 100V GBU 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| 70MT100KB 70MT80KB 60MT100KB 60MT120KB 60MT140KB 6 |
ER 3C 3#12 PIN PLUG CRIMP
CONNECTOR ACCESSORY
THREE PHASE BRIDGE
800V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
IRF[International Rectifier]
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| IRC730 |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)
|
IRF[International Rectifier]
|
| KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G |
Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A
Silicon Bridge Rectifiers
Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A
Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=35A
|
Comchip Technology
|
| ST303C04CFL0 ST303C04CFN0 ST303C08CFL0 ST303C08CFN |
Silicon Controlled Rectifier, 1180 A, 1000 V, SCR, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3
MAX II CPLD 1270 LE 256-FBGA 400V 1180A逆变晶闸管采用TO - 200AB（电子北辰）封装
Cyclone II FPGA 35K FBGA-672 800V180A逆变晶闸管采用TO - 200AB（电子北辰）封装
400V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
800V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
1000V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package
|
Vishay Semiconductors
TE Connectivity, Ltd.
International Rectifier
|
